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YG865C10 View Datasheet(PDF) - Fuji Electric

Part NameYG865C10 Fuji
Fuji Electric Fuji
DescriptionLow IR Schottky barrier diode (100V / 20A)
YG865C10 Datasheet PDF : 3 Pages
1 2 3
(100V / 20A )
Characteristics
Forward Characteristic (typ.)
10
Tj=150oC
Tj=125oC
Tj=100oC
Tj=25oC
1
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VF Forward Voltage (V)
Forward Power Dissipation (max.)
16
14
11112222Io3333444455556666777788889999000011112222333344445555
λ
12
360 º
10 Square wave λ=60o
Square wave λ=120o
Sine wave λ=180o
8 Square wave λ=180o
DC
6
4
2
Per 1element
0
0
2
4
6
8
10
12
Io Average Output Current (A)
YG865C10R (20A)
Reverse Characteristic (typ.)
Tj=150oC
101
Tj=125oC
Tj=100oC
100
10-1
Tj= 25oC
10-2
10-3
10-4
0
10 20 30 40 50 60 70 80 90 100 110 120
VR Reverse Voltage (V)
Reverse Power Dissipation (max.)
8
360 º
6
VR
11111111222222223333333344444444 11111111222222223333333344444444
DC
α
4
α=180o
2
0
0
20
40
60
80
100
120
VR Reverse Voltage (V)
Current Derating (Io-Tc) (max.)
160
150
140
130
120
110
100
90
360 º
80
λ
70
60
111222333444555666777888Io999000111222333444555
VR=50V
DC
SSqinueawreawveavλe=1λ8=01o80o
Square wave λ=120o
Square wave λ=60o
50
0
5
10
15
20
25
30
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Junction Capacitance Characteristic (max.)
1000
100
10
1
10
100
1000
VR Reverse Voltage (V)
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