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J160 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
J160 Silicon P-Channel MOS FET Renesas
Renesas Electronics Renesas
J160 Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SJ160, 2SJ161, 2SJ162
Main Characteristics
Power vs. Temperature Derating
150
100
50
0
0
50
100
150
Case Temperature Tc (°C)
Typical Output Characteristics
–10
–8
–6
–4
–2
0
0
–9
–8
–7
–6
–5
–4
–10 –20
Tc = 25°C
–3 Pch = 100 W
–2
–1 V
VGS = 0
–30 –40 –50
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Drain Current
–10
75°C
–5
25°C
–2
Tc = –25°C
–1
–0.5
–0.2
–0.1
–0.1 –0.2
–0.5 –1
VGD = 0 V
–2 –5 –10
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 5
Maximum Safe Operation Area
–20
Ta = 25°C
–10 ID max (Continuous) PW
–5
–2
–1
(–14.3 V,
–7 A)
DC
OPpWera=tio1n00(Tmc s=(=2151s°0hCom)t)s
(1
shot)
(–140
V,
–0.71
A)
–0.5
(–120 V, –0.83 A)
(–160 V, –0.63 A)
2SJ160
–0.2
–5 –10 –20
2SJ161
2SJ162
–50 –100 –200 –500
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
–1.0
VDS = –10 V
–0.8
Tc = –25°C
–0.6
25°C
–0.4
75°C
–0.2
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Gate to Source Voltage VGS (V)
Drain to Source Voltage vs.
Gate to Source Voltage
–10
Pulse Test
–8
–6
–5 A
–4
–2
–2 A
ID = –1 A
0
0
–2
–4
–6
–8 –10
Gate to Source Voltage VGS (V)
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