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2SK1163 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
2SK1163 Silicon N-Channel MOS FET / 2SK1163, 2SK1164 Hitachi
Hitachi -> Renesas Electronics Hitachi
2SK1163 Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SK1163, 2SK1164
Power vs. Temperature Derating
120
80
40
0
50
100
150
Case Temperature TC (°C)
Maximum Safe Operation Area
50
20
10
5
2
1.0
DC
PW
=
Operation
10
(T
10
1
100
ms
µs
ms (1 shot)
µs
0.5
C = 25°C)
0.2
Ta = 25°C
0.1
0.05
1 3 10
2SK1164
2SK1163
30 100 300 1,000
Drain to Source Voltage VDS (V)
3
1.0 D = 1
0.5
Normalized Transient Thermal Impedance vs. Pulse Width
TC = 25°C
0.3 0.2
0.1
0.1 0.05
0.02
0.03
0.01
0.01
1 Shot Pulse
10 µ
100 µ
θch–c (t) = γ S (t) · θch–c
θch–c = 1.25°C/W, TC = 25°C
PDM
PW
T
D
=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
4
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