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2SK1163 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
2SK1163 Silicon N-Channel MOS FET / 2SK1163, 2SK1164 Hitachi
Hitachi -> Renesas Electronics Hitachi
2SK1163 Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SK1163, 2SK1164
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1163
2SK1164
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
Unit
450
V
500
±30
V
11
A
40
A
11
A
100
W
150
°C
–55 to +150
°C
2
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