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K10A50D 데이터 시트보기 (PDF) - Toshiba

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K10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Toshiba
Toshiba Toshiba
K10A50D Datasheet PDF : 6 Pages
1 2 3 4 5 6
TK10A50D
rth – tw
10
1 Duty=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
10μ
100μ
SINGLE PULSE
PDM
t
T
Duty = t/T
Rth (ch-c) = 2.78 °C/W
1m
10m
100m
1
10
PULSE WIDTH tw (s)
SAFE OPERATING AREA
100
ID max (pulsed) *
ID max (continuous)
10
1 ms *
100 μs *
1
DC operation
Tc = 25°C
0.1
*: SINGLE NONREPETITIVE
0.01
PULSE Tc = 25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE.
0.001
0.1
1
10
VDSS max
100
1000
DRAIN-SOURCE VOLTAGE VDS (V)
EAS – Tch
300
240
180
120
60
0
25
50
75
100
125
150
CHANNEL TEMPEATURE (INITIAL)
Tch(°C)
15 V
15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVEFORM
RG = 25 Ω
VDD = 90 V, L = 4.49 mH
ΕAS
=
1
2
L I2
⎜⎛
⎜⎝
BVDSS
BVDSS VDD
⎟⎞
⎟⎠
5
2013-11-01
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