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K10A50D 데이터 시트보기 (PDF) - Toshiba

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K10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Toshiba
Toshiba Toshiba
K10A50D Datasheet PDF : 6 Pages
1 2 3 4 5 6
RDS (ON) – Tc
2
COMMON SOURCE
VGS = 10 V
PULSE TEST
1.6
10
1.2
5
ID = 2.5 A
0.8
0.4
0
80
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
TK10A50D
IDR – VDS
100
COMMON SOURCE
Tc = 25°C
PULSE TEST
10
1
10
5
31
VGS = 0 V
0.1
0
0.3
0.6
0.9
1.2
1.5
DRAIN-SOURCE VOLTAGE VDS (V)
10000
1000
100
CAPACITANCE – VDS
Ciss
Coss
10
COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
0.1
1
Crss
10
100
DRAIN-SOURCE VOLTAGE VDS (V)
Vth – Tc
5
4
3
2
COMMON SOURCE
1 VDS = 10 V
ID = 1 mA
PULSE TEST
0
80
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
PD – Tc
50
40
30
20
10
0
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
500
20
VDS
400
300
200
100
16
200
VDD = 100 V
12
400
VGS
8
COMMON SOURCE
ID = 10 A
Tc = 25°C
4
PULSE TEST
0
0
0
6
12
18
24
30
TOTAL GATE CHARGE Qg (nC)
4
2013-11-01
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