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K10A50D 데이터 시트보기 (PDF) - Toshiba

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K10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Toshiba
Toshiba Toshiba
K10A50D Datasheet PDF : 6 Pages
1 2 3 4 5 6
ID – VDS
10
COMMON SOURCE
10
Tc = 25°C
PULSE TEST
8
6
7.5
8
7
4
6.5
2
VGS = 6 V
0
0
2
4
6
8
DRAIN-SOURCE VOLTAGE VDS
10
(V)
TK10A50D
ID – VDS
20
10
8
16
COMMON SOURCE
Tc = 25°C
PULSE TEST
12
7.5
8
7
4
6.5
VGS = 6 V
0
0
10
20
30
40
50
DRAIN-SOURCE VOLTAGE VDS (V)
ID – VGS
20
COMMON SOURCE
VDS = 10 V
PULSE TEST
16
12
8
25
4
100
Tc = −55 °C
0
0
2
4
6
8
GATE-SOURCE VOLTAGE VGS
10
(V)
VDS – VGS
10
COMMON SOURCE
Tc = 25°C
PULSE TEST
8
ID = 10 A
6
4
5
2
2.5
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
Yfs– ID
100
COMMON SOURCE
VDS = 10 V
PULSE TEST
10
Tc = −55 °C
100
25
1
RDS (ON) – ID
10
COMMON SOURCE
Tc = 25°C
PULSE TEST
1
VGS = 10 V
0.1
0.1
1
10
100
DRAIN CURRENT ID (A)
0.1
0.1
1
10
100
DRAIN CURRENT ID (A)
3
2013-11-01
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