K07N120 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
K07N120
Infineon Technologies
K07N120 Datasheet PDF : 13 Pages
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SKW07N120
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tF
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=25°C,
VCC=800V,IC=8A,
VGE=15V/0V,
RG=47Ω,
Lσ1)=180nH,
Cσ1)=40pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25°C,
VR=800V, IF=8A,
diF/dt=400A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
27
29
440
21
0.6
0.4
1.0
60
0.3
9
400
Unit
max.
35 ns
38
570
27
0.8 mJ
0.55
1.35
ns
µC
A
A/µs
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
min.
Value
typ.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
Tj=150°C
-
30
tr
VCC=800V,
-
26
td(off)
IC=8A,
-
490
tf
VGE=15V/0V,
-
30
Eon
Eoff
RG=47Ω,
Lσ1)=180nH,
Cσ1)=40pF
-
1.0
-
0.7
Ets
Energy losses include
-
1.7
“tail” and diode
reverse recovery.
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
Tj=150°C
-
170
tS
VR=800V, IF=8A,
-
tF
diF/dt=500A/µs
-
Diode reverse recovery charge
Qrr
-
1.1
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tF
Irrm
dirr/dt
-
15
-
110
1) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.
Unit
max.
36 ns
31
590
36
1.2 mJ
0.9
2.1
ns
µC
A
A/µs
Power Semiconductors
3
Jul-02
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