K07N120(2008) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

K07N120
(Rev.:2008)

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKW07N120

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

• Lower Eoff compared to previous generation

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

C

G

E

- Inverter

- SMPS

• NPT-Technology offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

• Qualified according to JEDEC1 for target applications

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

PG-TO-247-3

Type

SKW07N120

VCE

IC

1200V 8A

Eoff

0.7mJ

Tj Marking Package

150°C K07N120 PG-TO-247-3

Maximum Ratings

Parameter

Collector-emitter voltage

DC collector current

TC = 25°C

TC = 100°C

Pulsed collector current, tp limited by Tjmax

Turn off safe operating area

VCE ≤ 1200V, Tj ≤ 150°C

Diode forward current

TC = 25°C

TC = 100°C

Diode pulsed current, tp limited by Tjmax

Gate-emitter voltage

Short circuit withstand time2

VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C

Power dissipation

TC = 25°C

Operating junction and storage temperature

Soldering temperature,

wavesoldering, 1.6mm (0.063 in.) from case for 10s

Symbol

VCE

IC

ICpuls

-

IF

IFpuls

VGE

tSC

Ptot

Tj , Tstg

Ts

Value

Unit

1200

V

A

16.5

7.9

27

27

13

7

27

±20

V

10

µs

125

W

-55...+150

°C

260

1 J-STD-020 and JESD-022

2 Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors

1

Rev. 2_2 Sep 08

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