100100 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
| 100100 Datasheet PDF : 0 Pages | |||
NXP Semiconductors
BC857QAS
45 V, 100 mA PNP/PNP general-purpose transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Per transistor
ICBO
collector-base cut-off VCB = -30 V; IE = 0 A; Tj = 150 °C
current
VCB = -30 V; IE = 0 A; Tamb = 25 °C
IEBO
emitter-base cut-off
VEB = -5 V; IC = 0 A; Tamb = 25 °C
current
hFE
DC current gain
VCE = -5 V; IC = -2 mA; Tamb = 25 °C
VCEsat
collector-emitter
saturation voltage
IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C
IC = -100 mA; IB = -5 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VBEsat
base-emitter saturation IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C
voltage
IC = -100 mA; IB = -5 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VBE
base-emitter voltage VCE = -5 V; IC = -2 mA; Tamb = 25 °C
VCE = -5 V; IC = -10 mA; Tamb = 25 °C
CC
collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
CE
emitter capacitance VEB = -0.5 V; IC = 0 A; f = 1 MHz;
Tamb = 25 °C
fT
transition frequency VCE = -5 V; IC = -10 mA; f = 100 MHz;
Tamb = 25 °C
NF
noise figure
VCE = -5 V; IC = 0.2 mA; RS = 2 kΩ;
f = 1 MHz; B = 200 Hz; Tamb = 25 °C
Min Typ Max Unit
-
-
-
-
-
-
200 -
-
-
-
-
-5
µA
-15 nA
-100 nA
450
-100 mV
-300 mV
-
-760 -
mV
-
-900 -
mV
-600 -660 -725 mV
-
-710 -820 mV
-
-
4
pF
-
10
-
pF
100 -
-
MHz
-
-
10
dB
BC857QAS
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 July 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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