D1861 View Datasheet(PDF) - ROHM Semiconductor
Part Name
Description
Manufacturer
D1861 Datasheet PDF : 1 Pages
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Transistors
2SB1183 / 2SB1239
Power transistor (−40V, −2A)
2SB1183 / 2SB1239
!Features
1) Darlington connection for high DC current gain.
2) Built-in 4kΩ resistor between base and emitter.
3) Complements the 2SD1759 / 2SD1861.
!Equivalent circuit
C
B
RBE 4kΩ
C : Collector
B : Base
E
E : Emitter
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
−40
Collector-emitter voltage
VCER
−40
Emitter-base voltage
VEBO
−5
Collector current
−2
IC
−3
1
Collector power
dissipation
2SB1183
PC
10
2SB1239
1
Junction temperature
Tj
150
Storage temperature
Tstg
−55~+150
∗1 Single pulse Pw=10ms
∗2 Printed circuit board 1.7 mm thick, collector plating 100mm2 or larger.
Unit
V
V
V
A(DC)
A(Pulse) ∗1
W
W(Tc=25°C)
W
∗2
°C
°C
!Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SB1183
CPT3
1k~200k
TL
2500
2SB1239
ATV
1k~
T146
2500
!External dimensions (Units : mm)
2SB1183
5.5 1.5
0.9
C0.5
0.8Min.
1.5
2.5
9.5
ROHM : CPT3
EIAJ : SC-63
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
2SB1239
6.8
2.5
0.65Max.
0.5
(1) (2) (3)
2.54 2.54
1.05 0.45
Taping specifications
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
!Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
2SB1183
2SB1239
Output capacitance
Symbol
BVCBO
BVCER
BVEBO
ICBO
IEBO
VCE(sat)
hFE
Cob
Min.
−40
−40
−5
−
−
−
1000
1000
−
Typ. Max.
−
−
−
−
−
−
−
−1
−
−1
−
−1.5
−
20000
−
−
11
−
Unit
Conditions
V
IC=−50µA
V
IC=−1mA, RBE=10kΩ
V
IE=−50µA
µA VCB=−24V
µA VEB=−4V
V
IC/IB=−0.6A/−1.2mA
−
VCE/IC=−2V/−0.5A
−
pF VCB=−10V, IE=0A, f=1MHz
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