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2PD1820AQ,115 View Datasheet(PDF) - NXP Semiconductors.

Part Name
Description
Manufacturer
2PD1820AQ,115
NXP
NXP Semiconductors. NXP
2PD1820AQ,115 Datasheet PDF : 6 Pages
1 2 3 4 5 6
NXP Semiconductors
NPN general purpose transistor
Product data sheet
2PD1820A
FEATURES
High current (max. 500 mA)
Low voltage (max. 50 V)
Low collector-emitter saturation voltage (max. 600 mV).
APPLICATIONS
General purpose switching and amplification, especially
for portable equipment.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
NPN transistor in an SC-70; SOT323 plastic package.
PNP complement: 2PB1219A.
MARKING
TYPE NUMBER
2PD1820AQ
2PD1820AR
2PD1820AS
MARKING CODE(1)
AQ
AR
AS
Note
1. = - : Made in Hong Kong.
= t : Made in Malaysia.
handbook, halfpage
3
3
1
1
Top view
2
2
MAM336
Fig.1 Simplified outline (SC-70; SOT323) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
60 V
50 V
5
V
500 mA
1
A
200 mA
200 mW
65 +150 °C
150 °C
65 +150 °C
1999 Apr 12
2
 

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