BAS40-05-7-F(Rev19-2) View Datasheet(PDF) - Diodes Incorporated.

Part Name

Description

Manufacturer

BAS40-05-7-F
(Rev.:Rev19-2)

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Diodes Incorporated. 

Features

• Low Forward Voltage Drop

• Fast Switching

• PN Junction Guard Ring for Transient and ESD

Protection

• Lead Free/RoHS Compliant (Note 3)

• Qualified to AEC-Q101 Standards for High

Reliability

Mechanical Data

• Case: SOT-23

• Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminals: Solderable per MIL-STD-202, Method

208

• Lead Free Plating (Matte Tin Finish annealed

over Alloy 42 leadframe).

• Polarity: See Diagrams Below

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.008 grams (approximate)

SPICE MODELS: BAS40 BAS40-04 BAS40-05 BAS40-06

BAS40/ -04/ -05/ -06

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Top View

SOT-23

Dim

Min

Max

A

0.37

0.51

B

1.20

1.40

C

2.30

2.50

D

0.89

1.03

E

0.45

0.60

G

1.78

2.05

H

2.80

3.00

J

0.013

0.10

K

0.903

1.10

L

0.45

0.61

M

0.085

0.180

α

0°

8°

All Dimensions in mm

BAS40 Marking: K43

BAS40-04 Marking: K44

BAS40-05 Marking: K45

BAS40-06 Marking: K46

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Forward Continuous Current (Note 1)

Power Dissipation (Note 1)

Forward Surge Current (Note 1)

@ t < 1.0s

Thermal Resistance, Junction to Ambient Air (Note 1)

Operating Temperature Range

Storage Temperature Range

Symbol

VRRM

VRWM

VR

IFM

Pd

IFSM

RθJA

Tj

TSTG

Value

40

200

350

600

357

-55 to +125

-65 to +150

Unit

V

mA

mW

mA

°C/W

°C

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Reverse Breakdown Voltage (Note 2)

Forward Voltage

Reverse Leakage Current (Note 2)

Total Capacitance

Reverse Recovery Time

Symbol Min Typ

V(BR)R

40

⎯

VF

⎯

⎯

IR

⎯ 20

CT

⎯ 4.0

trr

⎯

⎯

Max

⎯

380

1000

200

5.0

5.0

Unit

V

mV

nA

pF

ns

Test Condition

IR = 10μA

tp < 300μs, IF = 1.0mA

tp < 300μs, IF = 40mA

tp < 300μs, VR = 30V

VR = 0V, f =1.0MHz

IF = IR = 10mA to IR = 1.0mA,

RL = 100Ω

Notes:

1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration pulse test used to minimize self-heating effect.

3. No purposefully added lead.

DS11006 Rev. 19 - 2

1 of 3

www.diodes.com

BAS40/ -04/ -05/ -06

© Diodes Incorporated

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