Y2010DN View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
Y2010DN Datasheet PDF : 4 Pages
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FYP2010DN
Schottky Barrier Rectifier
Features
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
August 2009
1.Anode
3.Anode
2. Cathode
123
TO-220
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VRRM
VR
IF(AV)
IFSM
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
Average Rectified Forward Current
@ TC = 120°C
Non-repetitive Peak Surge Current (per diode)
60Hz Single Half-Sine Wave
TJ, TSTG Operating Junction and Storage Temperature
Thermal Characteristics
Symbol
Parameter
RθJC
Maximum Thermal Resistance, Junction to Case (per diode)
Electrical Characteristics (per diode)
Symbol
Parameter
VFM *
Maximum Instantaneous Forward Voltage
IF = 10A
IF = 10A
IF = 20A
IF = 20A
IRM *
Maximum Instantaneous Reverse Current
@ rated VR
* Pulse Test: Pulse Width=300μs, Duty Cycle=2%
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
Value
100
100
20
150
-65 to +150
Value
1.7
Value
0.77
0.65
-
0.75
0.1
20
Units
V
V
A
A
°C
Units
°C/W
Units
V
mA
© 2009 Fairchild Semiconductor Corporation
FYP2010DN Rev. B1
1
www.fairchildsemi.com
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