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KA1H0380RB View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
KA1H0380RB
Fairchild
Fairchild Semiconductor Fairchild
KA1H0380RB Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
Absolute Maximum Ratings
Parameter
Drain-source (GND) voltage (1)
Drain-Gate voltage (RGS=1M)
Gate-source (GND) voltage
Drain current pulsed (2)
Single pulsed avalanche energy (3)
Avalanche current(4)
Continuous drain current (TC=25°C)
Continuous drain current (TC=100°C)
Supply voltage
Analog input voltage range
Total power dissipation
Symbol
VDSS
VDGR
VGS
IDM
EAS
IAS
ID
ID
VCC
VFB
PD
Derating
Operating temperature
Storage temperature
TOPR
TSTG
Notes:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=51mH, VDD=50V, RG=25, starting Tj=25°C
4. L=13µH, starting Tj=25°C
Value
800
800
±30
12
95
6
3.0
2.1
30
0.3 to VSD
35
0.28
25 to +85
55 to +150
Unit
V
V
V
ADC
mJ
A
ADC
ADC
V
V
W
W/°C
°C
°C
2
 

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