Philips Semiconductors
N-channel enhancement mode vertical
D-MOS transistor
Product specification
BST86
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in SOT89
envelope and designed for use as
Surface Mounted Device (SMD) in
thin and thick-film circuits for
application with relay, high-speed and
line-transformer drivers.
FEATURES
• Direct interface to C-MOS, TTL,
etc.
• High-speed switching
• No second breakdown
QUICK REFERENCE DATA
Drain-source voltage
Drain-source voltage (non-repetitive peak;
tp ≤ 2 ms)
Gate-source voltage (open drain)
Drain current (DC)
Total power dissipation up to Tamb = 25 °C
Drain-source ON-resistance
ID = 15 mA; VGS = 3 V
Transfer admittance
ID = 300 mA; VDS = 15 V
PINNING - SOT89
1 = source
2 = drain
3 = gate
VDS
max.
VDS(SM) max.
180 V
200 V
±VGSO
ID
Ptot
max.
max.
max.
20 V
300 mA
1W
RDS(on)
typ.
max.
7Ω
10 Ω
Yfs typ. 250 mS
PIN CONFIGURATION
Marking: K0
handbook, halfpage
d
g
1
2
3
s
Bottom view
MAM355
Fig.1 Simplified outline and symbol.
April 1995
2