RJP30E2 View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

RJP30E2

Silicon N Channel IGBT High Speed Power Switching / Vce(sat) = 1.7V typ

Renesas Electronics 

RJP30E2DPP-M0

Preliminary

Normalized Transient Thermal Impedance vs. Pulse Width

10

3

D=1

1

0.5

0.3

0.1

0.03

0.2

0.1

0.05

0.02

0.01

0.003

0.01

1shot

pulse

0.001

Tc = 25°C

PDM

PW

T

1m

10 m

100 m

Pulse Width PW (s)

D=

PW

T

1

10

Switching Time Test Circuit

Ic Monitor

RL

Vin Monitor

Rg

D.U.T.

VCC

Vin = 15 V

Waveform

90%

Vin

10%

90%

90%

Ic

td(on)

10%

tr

td(off)

ton

toff

10%

tf

R07DS0347EJ0200 Rev.2.00

Apr 12, 2011

Page 5 of 6

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