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M69AR048B View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
M69AR048B 32 Mbit (2Mb x16) 1.8V Asynchronous PSRAM ST-Microelectronics
STMicroelectronics ST-Microelectronics
M69AR048B Datasheet PDF : 29 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Operational modes are determined by device con-
trol inputs W, E1, E2, LB and UB as summarized
in the Operating Modes table (see Table 2).
Power Up Sequence
Because the internal control logic of the
M69AR048B needs to be initialized, the following
power-up procedure must be followed before the
memory is used (see Figure 25., Power-Up Mode
AC Waveforms):
– Apply power and wait for VCC to stabilize
– Wait 300µs while driving both Chip Enable
signals (E1 and E2) High
Read Mode
The device is in Read mode when:
– Write Enable (W) is High and
– Output Enable (G) is Low and
– the two Chip Enable signals are asserted
(E1 is Low, and E2 is High).
The time taken to enter Read mode (tELQV, tGLQV
or tBLQV) depends on which of the above signals
was the last to reach the appropriate level.
Data out (DQ15-DQ0) may be indeterminate
during tELQX, tGLQX and tBLQX, but data will always
be valid during tAVQV. See Figures 8, 9, 10, 11 and
12 and Table 11., Read Mode AC Characteristics,
for details of when the outputs become valid.
Write Mode
The device is in Write mode when
– Write Enable (W) is Low and
– at least one of Upper Byte Enable (UB)
and Lower Byte Enable (LB) is Low
– the two Chip Enable signals are asserted
(E1 is Low, and E2 is High).
The Write cycle begins just after the event (the fall-
ing edge) that causes the last of these conditions
to become true (tAVWL or tAVEL or tAVBL).
The Write cycle is terminated by the rising edge of
Write Enable (W) or Chip Enable (E1), whichever
occurs first.
If the device is in Write mode (Chip Enable (E1) is
Low, Output Enable (G) is Low, Upper Byte En-
able (UB) and/or Lower Byte Enable (LB) is Low),
then Write Enable (W) will return the outputs to
high impedance within tWHDZ of its rising edge.
Care must be taken to avoid bus contention in this
type of operation. Data input must be valid for tD-
VWH before the rising edge of Write Enable (W), or
for tDVEH before the rising edge of Chip Enable
(E1), whichever occurs first, and remain valid for
See Figures 13, 14, 15, 16, 17 and 18, and Table
12., Write Mode AC Characteristics, for details of
the timing requirements. Figures 19, 20, 21 and 22
show Read and Write mode AC waveforms.
Standby Mode
The device is in Standby mode when:
– Chip Enable (E1) is High and
– Chip Enable (E2) is High
The input/output buffers and the decoding/control
logic are switched off, but the dynamic array con-
tinues to be refreshed. In this mode, the memory
current consumption, ISB, is reduced, and the data
remains valid.
See Figure 26., Standby Mode Entry AC Wave-
forms, After Read and Table 13., Standby Mode
AC Characteristics for details.
Power-Down Modes
Description. The M69AR048B has four Power-
down modes, Deep Power-down, 4Mbit Partial
Power-Down, 8Mbit Partial Power-Down, and
16Mbit Partial Power-Down (see Table 3).
These can be entered using a series of read and
write operations. Each mode has the following fea-
tures. The default state is Deep Power-Down and
it is the lowest power consumption but all data will
be lost once E2 is brought Low for Power-down.
No sequence is required to put the device in Deep
Power-down mode after Power-up.
The device is in one of the Power-Down modes
– Chip Enable (E2) is Low
All the device logic is switched off and all internal
operations are suspended. This gives the lowest
power consumption. In this operating mode, no re-
fresh is performed, and data is lost if the duration
is longer than 10ns. This mode is useful for those
applications where the data contents are no longer
needed, and can be lost, but where reduced cur-
rent consumption is of major importance.
See Figure 24., Power-Down Mode AC Wave-
forms and Table 13., Standby Mode AC Charac-
teristics for details.
Power-Down Program Sequence. The Power-
Down Program sequence is used to program the
Power-Down Configuration. It requires a total of six
read and write operations, with specific addresses
and data. Between each read or write operation
the device must be in Standby mode.
Table 4 and Figure 23. show the sequence. In the
first cycle, the Byte at the highest memory address
(MSB) is read. In the second and third cycles, the
data (RDa) read by first cycle are written back. If
the third cycle is written into a different address, the
sequence is aborted, and the data written by the
third cycle is valid as in a normal write operation. In
the fourth and fifth cycles, the Power-Down Config-
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