M29W800DB70M1 View Datasheet(PDF) - Unspecified

Part Name

Description

Manufacturer

M29W800DB70M1

8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory

Unspecified 

M29W800DT, M29W800DB

Common flash interface (CFI)

Table 25. Device geometry definition

Address

x 16

x8

Data

Description

Value

27h

4Eh 0014h Device size = 2n in number of bytes

1 Mbyte

28h

50h

0002h

Flash device interface code description

29h

52h

0000h

x 8, x 16

async.

2Ah 54h 0000h Maximum number of bytes in multi-byte program or page =

2Bh

56h

0000h 2n

NA

Number of erase block regions within the device.

2Ch 58h 0004h It specifies the number of regions within the device

4

containing contiguous erase blocks of the same size.

2Dh 5Ah 0000h Region 1 information

1

2Eh 5Ch 0000h Number of identical size erase block = 0000h+1

2Fh 5Eh 0040h Region 1 information

30h

60h

0000h Block size in region 1 = 0040h * 256 bytes

16-Kbyte

31h

62h

0001h Region 2 information

2

32h

64h

0000h Number of identical size erase block = 0001h+1

33h

66h

0020h Region 2 information

34h

68h

0000h Block size in region 2 = 0020h * 256 bytes

8-Kbyte

35h 6Ah 0000h Region 3 information

1

36h 6Ch 0000h Number of identical size erase block = 0000h+1

37h 6Eh 0080h Region 3 information

38h

70h

0000h Block size in region 3 = 0080h * 256 byte

32-Kbyte

39h

72h 000Eh Region 4 information

15

3Ah 74h 0000h Number of identical-size erase block = 000Eh+1

3Bh 76h 0000h Region 4 information

3Ch 78h 0001h Block size in region 4 = 0100h * 256 byte

64-Kbyte

43/52

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