KDS3912 View Datasheet(PDF) - TY Semiconductor
Part Name
Description
Manufacturer
KDS3912 Datasheet PDF : 2 Pages
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SMD Type
ICIC
Product specification
KDS3912
Electrical Characteristics Ta = 25
Parameter
Single Pulse Drain-Source Avalanche Energy
Maximum Drain-Source Avalanche Current
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage Temperature
Coefficient
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode
Forward Current
Drain-Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Symbol
WDSS
IAR
BVDSS
Testconditons
Single Pulse,VDD=50V,ID=3A(Not 2)
( Not 2)
VGS = 0 V, ID = 250 A
ID = 250 A, Referenced to 25
IDSS
IGSSF
IGSSR
VGS(th)
VDS = 80 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
VDS = VGS, ID = 250 A
ID = 250 A, Referenced to 25
RDS(on)
ID(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
IS
VSD
trr
Qrr
VGS = 10 V, ID = 3 A
VGS = 6 V, ID = 2.8 A
VGS = 10 V, ID =3 A,TJ = 125
VGS = 10 V, VDS = 10V
VDS = 10 V, ID = 3A
VDS = 50 V, VGS = 0 V,f = 1.0 MHz
VDD = 50 V, ID = 1 A,VGS = 10 V,
RGEN = 6
VDS = 50 V, ID = 3 A,VGS = 10 V
(Note 2)
VGS = 0 V, IS = 1.3 A (Not 2)
IF = 3A
diF/dt = 100 A/ s (Not 2)
Min Typ Max Unit
90 mJ
3.0 A
100
V
108
mV/
10
A
100 nA
-100 nA
2 2.5 4
V
-6
mV/
92 125
98 135 m
175 250
10
A
11
S
632
pF
40
pF
20
pF
8.5 17 ns
2
4
ns
23 37 ns
4.5 9 ns
14 20 nC
2.4
nC
3.8
nC
1.3 A
0.76 1.2 V
30
nS
106
nC
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4008-318-123
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