DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

IRFP15N60LPBF View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
Manufacturer
IRFP15N60LPBF
Vishay
Vishay Semiconductors Vishay
IRFP15N60LPBF Datasheet PDF : 0 Pages
IRFP15N60L, SiHFP15N60L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.44
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance
RDS(on)
Forward Transconductance
gfs
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Coss eff.
Coss eff. (ER)
Total Gate Charge
Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Qgs
Qgd
td(on)
Rise Time
tr
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
td(off)
tf
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 9.0 Ab
VDS = 50 V, ID = 9.0 A
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 0 V,
VDS = 0 V to 480 Vc
VGS = 10 V
ID = 15 A, VDS = 480 V,
see fig. 7 and 15b
VDD = 300 V, ID = 15 A,
RG = 1.8 Ω, VGS = 10 V,
see fig. 11a and 11bb
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Currenta
ISM
p - n junction diode
D
G
S
MIN.
600
-
3.0
-
-
-
-
8.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
0.39
-
-
-
-
0.385
-
-
-
5.0
± 100
50
2.0
0.460
-
V
V/°C
V
nA
µA
mA
Ω
S
2720
-
260
-
20
-
pF
120
-
100
-
-
100
-
30
nC
-
46
20
-
44
-
ns
28
-
5.5
-
-
15
A
-
60
Body Diode Voltage
VSD
TJ = 25 °C, IS = 15 A, VGS = 0 Vb
-
-
1.5
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 15 A
TJ = 125 °C, dI/dt = 100 A/µsb
-
130 200
ns
-
240 360
Body Diode Reverse Recovery Charge
Qrr
TJ = 25 °C, IF = 15 A, VGS = 0 Vb
TJ = 125 °C, dI/dt = 100 A/µsb
-
450 670
nC
-
1080 1620
Reverse Recovery Time
IRRM
TJ = 25 °C
-
5.8
8.7
A
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80 % VDS.
www.vishay.com
2
Document Number: 91204
S09-0008-Rev. B, 19-Jan-09
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]