IRF1404ZL View Datasheet(PDF) - Kersemi Electronic Co., Ltd.

Part Name

Description

Manufacturer

IRF1404ZL

AUTOMOTIVE MOSFET

Kersemi Electronic Co., Ltd. 

IRF1404ZS_L

www.kersemi.com

+

‚

-



RG

D.U.T

+

Driver Gate Drive

P.W.

Period

D=

P.W.

Period

ƒ

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance

Current Transformer

-„ +

D.U.T. ISD Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. VDS Waveform Diode Recovery

dv/dt

• dv/dt controlled by RG

• Driver same type as D.U.T.

VDD

+

• ISD controlled by Duty Factor "D"

-

• D.U.T. - Device Under Test

Re-Applied

Voltage

Body Diode

Inductor Curent

Forward Drop

Ripple ≤ 5%

* VGS = 5V for Logic Level Devices

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

* VGS=10V

VDD

ISD

VDS

VGS

RG

RD

D.U.T.

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

+-VDD

Fig 18a. Switching Time Test Circuit

VDS

90%

10%

VGS

td(on) tr

td(off) tf

Fig 18b. Switching Time Waveforms

8

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