# IRF1404ZS View Datasheet(PDF) - Kersemi Electronic Co., Ltd.

 Part Name Description Manufacturer IRF1404ZS AUTOMOTIVE MOSFET Kersemi Electronic Co., Ltd.
IRF1404ZS Datasheet PDF : 12 Pages
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www.kersemi.com
10000
Duty Cycle = Single Pulse
1000
0.01
100
0.05
0.10
10
IRF1404ZS_L
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
Fig 15. Typical Avalanche Current Vs.Pulsewidth
1.0E-02
1.0E-01
400
300
200
100
0
25
TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 75A
50
75
100 125 150
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
175 D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Fig 16. Maximum Avalanche Energy
Vs. Temperature
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
7