Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
Part Name  

IRF1404ZS View Datasheet(PDF) - Kersemi Electronic Co., Ltd.

Part NameIRF1404ZS KERSEMI
Kersemi Electronic Co., Ltd. KERSEMI
DescriptionAUTOMOTIVE MOSFET
IRF1404ZS Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
IRF1404ZS_L
www.kersemi.com
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
40 ––– –––
––– 0.033 –––
––– 2.7 3.7
V VGS = 0V, ID = 250µA
e V/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 75A
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
170 ––– ––– V VDS = 25V, ID = 75A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 40V, VGS = 0V
––– ––– 250
VDS = 40V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Qg
Total Gate Charge
––– 100 150
ID = 75A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
–––
–––
31
42
–––
–––
e nC VDS = 32V
VGS = 10V
td(on)
Turn-On Delay Time
tr
Rise Time
––– 18 –––
––– 110 –––
VDD = 20V
ID = 75A
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
36
58
–––
–––
e ns RG = 3.0
VGS = 10V
LD
Internal Drain Inductance
––– 4.5 –––
Between lead,
LS
Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 4340 –––
––– 1030 –––
––– 550 –––
––– 3300 –––
––– 920 –––
––– 1350 –––
and center of die contact
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
f VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 75
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
Ù (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
––– ––– 750
A showing the
integral reverse
––– ––– 1.3
––– 28 42
––– 34 51
e p-n junction diode.
V TJ = 25°C, IS = 75A, VGS = 0V
e ns TJ = 25°C, IF = 75A, VDD = 20V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
Direct download click here

 

Share Link : 
All Rights Reserved© datasheetq.com 2015 - 2019  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]