IRF2804S-7P
Static @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
โฮVDSS/โTJ
RDS(on) SMD
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
40 โโโ โโโ
โโโ 0.028 โโโ
โโโ 1.2 1.6
2.0 โโโ 4.0
220 โโโ โโโ
โโโ โโโ 20
โโโ โโโ 250
โโโ โโโ 200
โโโ โโโ -200
โโโ 170 260
โโโ 63 โโโ
โโโ 71 โโโ
โโโ 17 โโโ
โโโ 150 โโโ
โโโ 110 โโโ
โโโ 105 โโโ
โโโ 4.5 โโโ
V VGS = 0V, ID = 250ยตA
e V/ยฐC Reference to 25ยฐC, ID = 1mA
mโฆ VGS = 10V, ID = 160A
V VDS = VGS, ID = 250ยตA
S VDS = 10V, ID = 160A
ยตA VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125ยฐC
nA VGS = 20V
VGS = -20V
nC ID = 160A
e VDS = 32V
VGS = 10V
ns VDD = 20V
ID = 160A
d RG = 2.6โฆ
VGS = 10V
nH Between lead,
D
6mm (0.25in.)
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
โโโ 7.5 โโโ
โโโ 6930 โโโ
โโโ 1750 โโโ
โโโ 970 โโโ
โโโ 5740 โโโ
โโโ 1570 โโโ
โโโ 2340 โโโ
from package
G
and center of die contact
S
pF VGS = 0V
VDS = 25V
ฦ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ฦ = 1.0MHz
VGS = 0V, VDS = 32V, ฦ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
รย (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
โโโ โโโ 320
MOSFET symbol
D
A showing the
โโโ โโโ 1360
integral reverse
G
โโโ โโโ 1.3
p-n junction diode.
S
e V TJ = 25ยฐC, IS = 160A, VGS = 0V
โโโ 43
โโโ 48
65
72
e ns TJ = 25ยฐC, IF = 160A, VDD = 20V
nC di/dt = 100A/ยตs
Notes:
ย Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
ย Limited by TJmax, starting TJ = 25ยฐC,
L=0.049mH, RG = 25โฆ, IAS = 160A, VGS =10V.
Part not recommended for use above this value.
ย Pulse width โค 1.0ms; duty cycle โค 2%.
ย Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to
80% VDSS.
ย
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
ย This value determined from sample failure population. 100%
tested to this value in production.
ย This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
ย Rฮธ is measured at TJ of approximately 90ยฐC.
2
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