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IRF2804S-7P View Datasheet(PDF) - International Rectifier

Part Name
Description
Manufacturer
IRF2804S-7P
IR
International Rectifier IR
IRF2804S-7P Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
IRF2804S-7P
Static @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
โˆ†ฮ’VDSS/โˆ†TJ
RDS(on) SMD
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
40 โ€“โ€“โ€“ โ€“โ€“โ€“
โ€“โ€“โ€“ 0.028 โ€“โ€“โ€“
โ€“โ€“โ€“ 1.2 1.6
2.0 โ€“โ€“โ€“ 4.0
220 โ€“โ€“โ€“ โ€“โ€“โ€“
โ€“โ€“โ€“ โ€“โ€“โ€“ 20
โ€“โ€“โ€“ โ€“โ€“โ€“ 250
โ€“โ€“โ€“ โ€“โ€“โ€“ 200
โ€“โ€“โ€“ โ€“โ€“โ€“ -200
โ€“โ€“โ€“ 170 260
โ€“โ€“โ€“ 63 โ€“โ€“โ€“
โ€“โ€“โ€“ 71 โ€“โ€“โ€“
โ€“โ€“โ€“ 17 โ€“โ€“โ€“
โ€“โ€“โ€“ 150 โ€“โ€“โ€“
โ€“โ€“โ€“ 110 โ€“โ€“โ€“
โ€“โ€“โ€“ 105 โ€“โ€“โ€“
โ€“โ€“โ€“ 4.5 โ€“โ€“โ€“
V VGS = 0V, ID = 250ยตA
e V/ยฐC Reference to 25ยฐC, ID = 1mA
mโ„ฆ VGS = 10V, ID = 160A
V VDS = VGS, ID = 250ยตA
S VDS = 10V, ID = 160A
ยตA VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125ยฐC
nA VGS = 20V
VGS = -20V
nC ID = 160A
e VDS = 32V
VGS = 10V
ns VDD = 20V
ID = 160A
d RG = 2.6โ„ฆ
VGS = 10V
nH Between lead,
D
6mm (0.25in.)
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
โ€“โ€“โ€“ 7.5 โ€“โ€“โ€“
โ€“โ€“โ€“ 6930 โ€“โ€“โ€“
โ€“โ€“โ€“ 1750 โ€“โ€“โ€“
โ€“โ€“โ€“ 970 โ€“โ€“โ€“
โ€“โ€“โ€“ 5740 โ€“โ€“โ€“
โ€“โ€“โ€“ 1570 โ€“โ€“โ€“
โ€“โ€“โ€“ 2340 โ€“โ€“โ€“
from package
G
and center of die contact
S
pF VGS = 0V
VDS = 25V
ฦ’ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ฦ’ = 1.0MHz
VGS = 0V, VDS = 32V, ฦ’ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
รƒย™ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
โ€“โ€“โ€“ โ€“โ€“โ€“ 320
MOSFET symbol
D
A showing the
โ€“โ€“โ€“ โ€“โ€“โ€“ 1360
integral reverse
G
โ€“โ€“โ€“ โ€“โ€“โ€“ 1.3
p-n junction diode.
S
e V TJ = 25ยฐC, IS = 160A, VGS = 0V
โ€“โ€“โ€“ 43
โ€“โ€“โ€“ 48
65
72
e ns TJ = 25ยฐC, IF = 160A, VDD = 20V
nC di/dt = 100A/ยตs
Notes:
ย Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
ย‚ Limited by TJmax, starting TJ = 25ยฐC,
L=0.049mH, RG = 25โ„ฆ, IAS = 160A, VGS =10V.
Part not recommended for use above this value.
ยƒ Pulse width โ‰ค 1.0ms; duty cycle โ‰ค 2%.
ย„ Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to
80% VDSS.
ย… Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
ย† This value determined from sample failure population. 100%
tested to this value in production.
ย‡ This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
ยˆ Rฮธ is measured at TJ of approximately 90ยฐC.
2
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