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FQP5N60C View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FQP5N60C
Fairchild
Fairchild Semiconductor Fairchild
FQP5N60C Datasheet PDF : 0 Pages
Typical Characteristics
101 Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
100
5.5 V
5.0 V
Bottom : 4.5 V
10-1
10-2
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
6
5
4
VGS = 10V
3
2
VGS = 20V
1
Note : TJ = 25
0
0
2
4
6
8
10
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1000
800
600
400
200
0
10-1
C
iss
Coss
C
rss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes ;
1. VGS = 0 V
2. f = 1 MHz
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
101
150oC
100
25oC
-55oC
10-1
2
Notes :
1. VDS = 40V
2. 250μ s Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150
25
Notes :
1. VGS = 0V
2. 250μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V , Source-Drain voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
VDS = 120V
VDS = 300V
8
VDS = 480V
6
4
2
Note : ID = 4.5A
0
0
4
8
12
16
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
Rev. A, June 2003
 

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