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CSD17303Q5 View Datasheet(PDF) - Texas Instruments

Part NameCSD17303Q5 Texas-Instruments
Texas Instruments Texas-Instruments
Description30V N-Channel NexFET™ Power MOSFET
CSD17303Q5 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
CSD17303Q5
www.ti.com
SLPS246B – JANUARY 2010 – REVISED SEPTEMBER 2010
TYPICAL MOSFET CHARACTERISTICS (continued)
TA = 25°C, unless otherwise specified
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
1.6
100
ID = 25A
1.4 VGS = 8V
10
1.2
1
TC = 125°C
1
0.1
0.8
0.01
TC = 25°C
0.6
0.4
0.001
0.2
-75
-25
25
75
125
TC - Case Temperature - °C
175
G007
Figure 8. Normalized On-State Resistance vs. Temperature
0.0001
0
0.2
0.4
0.6
0.8
VSD - Source-to-Drain Voltage - V
Figure 9. Typical Diode Forward Voltage
1
G008
TEXT ADDED FOR SPACING
1k
TEXT ADDED FOR SPACING
1k
100
1ms
10
10ms
1 Area Limited
by RDS(on)
110000m1s
1s
0.1
Single Pulse
Typical RθJA = 99°C/W (min Cu)
0.01
0.01
0.1
1
10
VDS - Drain-to-Source Voltage - V
DC
100
G009
Figure 10. Maximum Safe Operating Area
100
TC = 125°C
10
TC = 25°C
1
0.01
0.1
1
10
t(AV) - Time in Avalanche - ms
100
G010
Figure 11. Single Pulse Unclamped Inductive Switching
TEXT ADDED FOR SPACING
120
100
80
60
40
20
0
-50 -25 0 25 50 75 100 125 150 175
TC - Case Temperature - °C
G011
Figure 12. Maximum Drain Current vs. Temperature
Copyright © 2010, Texas Instruments Incorporated
Product Folder Link(s): CSD17303Q5
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