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CSD17303Q5 View Datasheet(PDF) - Texas Instruments

Part NameCSD17303Q5 Texas-Instruments
Texas Instruments Texas-Instruments
Description30V N-Channel NexFET™ Power MOSFET
CSD17303Q5 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
CSD17303Q5
SLPS246B – JANUARY 2010 – REVISED SEPTEMBER 2010
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
TA = 25°C, unless otherwise specified
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
50
45
40
35
VGS = 8V
30
VGS = 4.5V
25
VGS = 3.5V
20
15
VGS = 3V
10
5
VGS = 2.5V
0
0
0.1
0.2
0.3
0.4
0.5
0.6
VDS - Drain-to-Source Voltage - V
G001
80
70 VDS = 5V
60
50
TC = 125°C
40
TC = 25°C
30
20
TC = -55°C
10
0
1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
VGS - Gate-to-Source Voltage - V
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
2.7
G002
TEXT ADDED FOR SPACING
8
7
ID = 25A
VDS = 15V
6
5
4
3
2
1
0
0
5
10
15
20
25
30
Qg - Gate Charge - nC
Figure 4. Gate Charge
35
G003
TEXT ADDED FOR SPACING
7
f = 1MHz
6
VGS = 0V
5
Coss = Cds + Cgd
4
Ciss = Cgd + Cgs
3
2
Crss = Cgd
1
0
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage - V
G004
Figure 5. Capacitance
TEXT ADDED FOR SPACING
1.6
1.4
ID = 250µA
1.2
1
0.8
0.6
0.4
0.2
0
-75
-25
25
75
125
175
TC - Case Temperature - °C
G005
Figure 6. Threshold Voltage vs. Temperature
TEXT ADDED FOR SPACING
6
ID = 25A
5
4
TC = 125°C
3
2
TC = 25°C
1
0
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage - V
G006
Figure 7. On-State Resistance vs. Gate-to-Source Voltage
4
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