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2SC3710 查看數據表(PDF) - Inchange Semiconductor

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2SC3710 Silicon NPN Power Transistors Iscsemi
Inchange Semiconductor Iscsemi
2SC3710 Datasheet PDF : 4 Pages
1 2 3 4
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3710
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
80
V
VCEsat Collector-emitter saturation voltage IC=6A;IB=0.3A
0.2 0.4
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=6A;IB=0.3A
VCB=80V; IE=0
VEB=6V; IC=0
0.9 1.2
V
10
μA
10
μA
hFE-1
DC current gain
IC=1A ; VCE=1V
70
240
hFE-2
DC current gain
IC=6A ; VCE=1V
40
COB
Output capacitance
IE=0 ; VCB=10V, f=1MHz
220
pF
固IN电C半H导AN体GE SEMICONDUCTOR fT
Transition frequency
IC=1A ; VCE=5V
80
Switching times
ton
Turn-on time
0.2
ts
Storage time
IB1=-IB2=0.3A
VCC30V ,RL=5Ω
1.0
MHz
μs
μs
tf
Fall time
0.2
μs
‹ hFE-1 Classifications
O
Y
70-140 120-240
2
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