2SC3012Q View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SC3012Q Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
VBEsat Base-emitter saturation voltage
IC=5A; IB=0.5A
ICBO
Collector cut-off current
VCB=130V; IE=0
IEBO
Emitter cut-off current
VEB=3V; IC=0
hFE-1
DC current gain
IC=2A ; VCE=5V
hFE-2
DC current gain
IC=5A ; VCE=5V
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=1A ; VCE=5V
hFE-1 Classifications
R
Q
P
60-120 100-200 160-320
Product Specification
2SC3012
MIN TYP. MAX UNIT
0.6 1.5
V
1.3 2.0
V
50
μA
50
μA
60
320
40
150
pF
60
MHz
2
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