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TB1500L-13-F-Rev6-2 View Datasheet(PDF) - Diodes Incorporated.

Part NameDescriptionManufacturer
TB1500L-13-F(Rev6-2) 30A BIDIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE Diodes
Diodes Incorporated. Diodes
TB1500L-13-F Datasheet PDF : 4 Pages
1 2 3 4
Electrical Characteristics @ TA = 25°C unless otherwise specified
Part Number
Rated
Repetitive
Off-State
Voltage
Off-State
Leakage
Current @
VDRM
On-State
Breakover
Voltage
Voltage
@ IT = 1A
VDRM (V) IDRM (uA)
VBO (V)
VT (V)
TB0640L
58
5
77
3.5
TB0720L
65
5
88
3.5
TB0900L
75
5
98
3.5
TB1100L
90
5
130
3.5
TB1300L
120
5
160
3.5
TB1500L
140
5
180
3.5
TB1800L
160
5
220
3.5
TB2300L
190
5
265
3.5
TB2600L
220
5
300
3.5
TB3100L
275
5
350
3.5
TB3500L
320
5
400
3.5
Breakover
Current
IBO
Min
(mA)
50
50
50
50
50
50
50
50
50
50
50
Max (mA)
800
800
800
800
800
800
800
800
800
800
800
Holding Current Off-State
IH
Capacitance
Min
(mA)
150
150
150
150
150
150
150
150
150
150
150
Max (mA)
800
800
800
800
800
800
800
800
800
800
800
CO (pF)
100
100
100
60
60
60
60
40
40
40
40
Marking
Code
T064L
T072L
T090L
T110L
T130L
T150L
T180L
T230L
T260L
T310L
T350L
Symbol
VDRM
IDRM
VBR
IBR
VBO
IBO
IH
VT
IPP
CO
Parameter
Stand-off Voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Breakover current
Holding current
NOTE: 2
On state voltage
Peak pulse current
Off-state capacitance
NOTE: 3
Notes:
1. RoHS revision13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
2. IH > (VL/RL) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge
recovery time does not exceed 30ms.
3. Off-state capacitance measured at f = 1.0MHz, 1.0VRMS signal, VR = 2VDC bias.
I
IPP
IBO
IH
IBR
IDRM
VT
V
VBR
VDRM
VBO
DS30359 Rev. 6 - 2
2 of 4
www.diodes.com
TB0640L - TB3500L
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