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Z0107MA 데이터 시트보기 (PDF) - ON Semiconductor

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Z0107MA Sensitive Gate Triacs Series Silicon Bidirectional Thyristors ON-Semiconductor
ON Semiconductor ON-Semiconductor
Z0107MA Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Z0103MA, Z0107MA, Z0109MA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(VD = 400 V, ITM = 0.84 A, Commutating dv/dt = 1.5 V/ms, Gate Open,
TJ = 110°C, f = 250 Hz, with Snubber)
di/dt(c)
1.6
Critical Rate of Rise of OffState Voltage (VD = 67% Rated VDRM,
Exponential Waveform, Gate Open, TJ = 110°C)
Z0103MA
Z0107MA
Z0109MA
dv/dt
10
30
20
60
50
75
Repetitive Critical Rate of Rise of OnState Current, TJ = 125°C
Pulse Width = 20 ms, IPKmax = 15 A, diG/dt = 1 A/ms, f = 60 Hz
di/dt
Max Unit
A/ms
V/ms
20
A/ms
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