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60N323 Просмотр технического описания (PDF) - Toshiba

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60N323 Discrete IGBT - 30G124 ~ 30F125 Toshiba
Toshiba Toshiba
60N323 Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
General-Purpose Transistors (Single)
VCEO IC
Classification (V) (mA)
Max Max
CST3
0.6
fSM
0.6
VESM
1.2
(Surface-Mount Type)
ESM
1.6
SSM
1.6
50
General-purpose
30
50
(mm)
NPN
PNP
NPN
100 2SC6026CT 2SA2154CT 2SC6026
150
500
500
Low noise 120 100
High current
12 400 2SC5376CT 2SA1955CT
12 500
15 800
25 800
30 800
10 2000
20 2000
20 1500
20 2500
30 3000
50 1000
50 1700
50 2500
(mm)
PNP
NPN
2SA2154
2SC6026MFV
2SC5376FV
(mm)
PNP
NPN
2SA2154MFV 2SC4738F
2SA1955FV 2SC5376F
(mm)
PNP
NPN
(mm)
PNP
2SA1832F 2SC4738 2SA1832
2SA1955F 2SC5376 2SA1955
Strobe
5000
10
(3000)
High breakdown
80 300
voltage
High hFE
50 150
Muting
20 300
High-speed
switching
15 200
High-voltage
200 50
switching
High breakdown 250 50
voltage
300 100
Darlington
40 300
For the PNP transistors, the minus sign () indicating a negative voltage is omitted.
The products shown in bold are also manufactured in offshore fabs.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
3
2010/9 SCE0004K
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