Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

60N321 Просмотр технического описания (PDF) - Toshiba

Номер в каталогеКомпоненты Описаниепроизводитель
60N321 Discrete IGBT - 30G124 ~ 30F125 Toshiba
Toshiba Toshiba
60N321 Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Bipolar Small-Signal Transistors
General-Purpose Transistors (Leaded Type)
Classification
VCEO (V)
Max
IC (A)
Max
hFE
VCE(sat) (V)
Max
General-purpose
Low noise
Audio drivers
High current
50
0.15
70 to 700
0.25
50
0.15
70 to 400
0.3
120
0.1
200 to 700
0.3
120
0.1
200 to 700
0.3
50
0.15
70 to 700
0.25
50
0.15
70 to 400
0.3
50
0.15
200 to 700
0.3
30
0.5
70 to 400
0.25
30
0.5
70 to 240
0.25
80
0.3
70 to 240
0.5
80
0.3
70 to 240
0.4
30
0.8
100 to 320
0.5
30
0.8
100 to 320
0.7
20
2
120 to 700
0.5
20
2
120 to 400
0.5
10
2
140 to 600
0.5
10
2
140 to 600
0.5
10
5
700 to 2000
0.25
10
5
450 to 700
0.27
10
5
450 to 700
0.3
80
1.2
100 to 200
0.09
Darlington
40
0.3
10000 min
1.3
Muting
High breakdown voltage
High-speed switching
20
0.3
200 to 1200
0.1
300
0.1
30 to 150
0.5
300
0.1
30 to 150
0.5
250
0.05
50 min
1.5
250
0.05
50 min
1.5
15
0.2
40 to 240
0.3
High hFE
50
0.15
600 to 3600
0.25
The products shown in bold are also manufactured in offshore fabs.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
Package
TO-92 (SC-43)
5.1 MAX
NPN
2SC1815
2SC2240
2SC1815(L)
2SC732TM
2SC1959
2SC1627
2SC2120
2SC3266
2SC3279
2SC5853
2SC5854
2SC6132
2SC982TM
2SC2878
2SC2551
2SC3333
2SC752(G)TM
2SC3112
(mm)
PNP
2SA1015
2SA970
2SA1015(L)
2SA562TM
2SA817
2SA950
2SA1296
2SA1300
2SA1091
2SA1320
2
2010/9 SCE0004K
Direct download click here

 

Share Link : 
All Rights Reserved© datasheetq.com 2015 - 2019  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]