STQ1NK60ZR-AP View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STQ1NK60ZR-AP

N-channel 600 V, 13 Ω, 0.8 A TO-92, SOT-223 Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS

VGS

ID

ID

IDM(1)

PTOT

Drain-source voltage (VGS = 0)

Gate-source voltage

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC=100°C

Drain current (pulsed)

Total dissipation at TC = 25°C

Derating factor

VESD(G-D) Gate source ESD(HBM-C=100pF, R=1.5KΩ)

dv/dt(2) Peak diode recovery voltage slope

TJ

Operating junction temperature

Tstg

Storage temperature

1. Pulse width limited by safe operating area

2. ISD ≤0.3A, di/dt ≤200A/µs, VDD =80%V(BR)DSS

IPAK

0.8

0.5

3.2

25

0.24

Value

TO-92 SOT-223

600

± 30

0.3

0.3

0.189

1.2

3

3.3

0.25

0.26

800

4.5

Unit

V

V

A

A

A

W

W/°C

V

V/ns

-55 to 150

°C

Table 3. Thermal resistance

Symbol

Parameter

Rthj-case

Rthj-a

Rthj-lead

Tl

Thermal resistance junction-case Max

Thermal resistance junction-ambient Max

Thermal resistance junction-lead Max

Maximum lead temperature for soldering

purpose

1. When mounted on 1 inch² FR-4 board, 2 Oz Cu

IPAK

5

100

--

275

Value

Unit

TO-92 SOT-223

--

--

°C/W

120 37.87(1) °C/W

40

--

°C/W

260

°C

Table 4. Avalanche data

Symbol

Parameter

Avalanche current, repetitive or not-repetitive

IAR

(pulse width limited by Tj Max)

Single pulse avalanche energy

EAS

(starting Tj=25°C, Id=Iar, Vdd=50V)

Value

Unit

0.8

A

60

mJ

3/16

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