DS75-08B View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
Manufacturer
| DS75-08B Datasheet PDF : 0 Pages | |||
Rectifier Diode
Avalanche Diode
DS 75
DSA 75
DSI 75
DSAI 75
VRRM = 800-1800 V
IF(RMS) = 160 A
IF(AV)M = 110 A
VRSM
V
V x (BR)minÿ VRRM
V
V
900
-
800
1300
-
1200
1300
1700
1900
1300
1760
1950
1200
1600
1800
x Only for Avalanche Diodes
Anode
on stud
DS 75-08B
DS 75-12B
DSA 75-12B
DSA 75-16B
DSA 75-18B
Cathode
on stud
DSI 75-08B
DSI 75-12B
DSAI 75-12B
DSAI 75-16B
DSAI 75-18B
Symbol
IF(RMS)
I
F(AV)M
PRSM
IFSM
I2t
TVJ
TVJM
Tstg
Md
Weight
Test Conditions
TVJ = TVJM
T
case
=
100°C;
180°
sine
DSA(I) types, TVJ = TVJM, tp = 10 ms
TVJ = 45°C;
VR = 0
TVJ = TVJM
V =0
R
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 45°C
VR = 0
T =T
VJ
VJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Mounting torque
Maximum Ratings
160
A
110
A
20 kW
1400
A
1500
A
1250
A
1310
A
9800
A2s
9450
A2s
7820
A2s
7210
A2s
-40...+180
°C
180
°C
-40...+180
°C
2.4-4.5
21-40
21
Nm
lb.in.
g
DO-203 AB
C
DS
DSA
A
A
DSI
DSAI
C
1/4-28UNF
A = Anode C = Cathode
Features
q International standard package,
JEDEC DO-203 AB (DO-5)
q Planar glassivated chips
Applications
q High power rectifiers
q Field supply for DC motors
q Power supplies
Advantages
q Space and weight savings
q Simple mounting
q Improved temperature and power
cycling
q Reduced protection circuits
Dimensions in mm (1 mm = 0.0394")
Symbol
IR
V
F
VT0
rT
RthJC
RthJH
d
S
dA
a
Test Conditions
TVJ = TVJM; VR = VRRM
I
F
=
150
A;
T
VJ
=
25°C
For power-loss calculations only
TVJ = TVJM
DC current
DC current
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
Characteristic Values
£
6 mA
£ 1.17
V
0.75
V
2 mW
0.5 K/W
0.9 K/W
4.05 mm
3.9 mm
100 m/s2
744
1-2
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