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U631H16S1K45 查看數據表(PDF) - Simtek Corporation

零件编号产品描述 (功能)生产厂家
U631H16S1K45 SimtekSoftStore 2K x 8 nvSRAM Simtek
Simtek Corporation Simtek
U631H16S1K45 Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
U631H16
DC Characteristics
Output High Voltage
Output Low Voltage
Output High Current
Output Low Current
Input Leakage Current
Output Leakage Current
High
Low
High at Three-State- Output
Low at Three-State- Output
Symbol
Conditions
VOH
VOL
IOH
IOL
IIH
IIL
IOHZ
IOLZ
VCC
IOH
IOL
VCC
VOH
VOL
VCC
VIH
VIL
VCC
VOH
VOL
= 4.5 V
=-4 mA
= 8 mA
= 4.5 V
= 2.4 V
= 0.4 V
= 5.5 V
= 5.5 V
= 0V
= 5.5 V
= 5.5 V
= 0V
C-Type
K-Type
Unit
Min. Max. Min. Max.
2.4
2.4
V
0.4
0.4 V
-4
-4 mA
8
8
mA
1
1 μA
-1
-1
μA
1
1 μA
-1
-1
μA
SRAM Memory Operations
No.
Switching Characteristics
Read Cycle
Symbol
Alt.
IEC
1 Read Cycle Timef
tAVAV
2 Address Access Time to Data Validg
tAVQV
3 Chip Enable Access Time to Data Valid tELQV
4 Output Enable Access Time to Data Valid tGLQV
5 E HIGH to Output in High-Zh
tEHQZ
6 G HIGH to Output in High-Zh
tGHQZ
7 E LOW to Output in Low-Z
tELQX
8 G LOW to Output in Low-Z
tGLQX
9 Output Hold Time after Addr. Changeg
tAXQX
10 Chip Enable to Power Activee
tELICCH
11 Chip Disable to Power Standbyd, e
tEHICCL
tcR
ta(A)
ta(E)
ta(G)
tdis(E)
tdis(G)
ten(E)
ten(G)
tv(A)
25
35
45
Unit
Min. Max. Min. Max. Min. Max.
25
35
45
ns
25
35
45 ns
25
35
45 ns
12
20
25 ns
13
17
20 ns
13
17
20 ns
5
5
5
ns
0
0
0
ns
3
3
3
ns
0
0
0
ns
25
35
45 ns
e: Parameter guaranteed but not tested.
f: Device is continuously selected with E and G both LOW.
g: Address valid prior to or at the same time with E transition LOW.
h: Measured ± 200 mV from steady state output voltage.
STK Control #ML0042
4
Rev 1.0
March 31, 2006
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