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U634H256SA35G1 查看數據表(PDF) - Zentrum Mikroelektronik Dresden AG

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U634H256SA35G1 PowerStore 32K x 8 nvSRAM ZMD
Zentrum Mikroelektronik Dresden AG ZMD
U634H256SA35G1 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
U634H256
Nonvolatile Memory Operations
Mode Selection
E
W HSB
A13 - A0
(hex)
Mode
I/O
Power
Notes
H
X
H
L
H
H
L
L
H
L
H
H
L
H
H
X
X
L
X
X
X
0E38
31C7
03E0
3C1F
303F
0FC0
0E38
31C7
03E0
3C1F
303F
0C63
X
Not Selected
Read SRAM
Write SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Nonvolatile STORE
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Nonvolatile RECALL
STORE/Inhibit
Output High Z
Output Data
Input Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output High Z
Output Data
Output Data
Output Data
Output Data
Output Data
Output High Z
Output High Z
Standby
Active
l
Active
Active
k, l
k, l
k, l
k, l
k, l
k
Active
k, l
k, l
k, l
k, l
k, l
k
ICC2/Standby
m
k: The six consecutive addresses must be in order listed (0E38, 31C7, 03E0, 3C1F, 303F, 0FC0) for a Store cycle or (0E38, 31C7, 03E0, 3C1F,
303F, 0C63) for a RECALL cycle. W must be high during all six consecutive cycles. See STORE cycle and RECALL cycle tables and dia
grams for further details.
The following six-address sequence is used for testing purposes and should not be used: 0E38, 31C7, 03E0, 3C1F, 303F, 339C.
l: I/O state assumes that G VIL. Activation of nonvolatile cycles does not depend on the state of G.
m: HSB initiated STORE operation actually occurs only if a WRITE has been done since last STORE operation. After the STORE (if any)
completes, the part will go into standby mode inhibiting all operation until HSB rises.
No.
PowerStore Power Up RECALL/
Hardware Controlled STORE
Symbol
Alt.
IEC
Conditions
Min. Max. Unit
24 Power Up RECALL Durationn, e
25 STORE Cycle Duration
26 HSB Low to Inhibit One
27 HSB High to Inhibit Offe
28 External STORE Pulse Widthe
HSB Output Low Currente,o
HSB Output High Currente, o
Low Voltage Trigger Level
tRESTORE
tHLQX
tHLQZ
tHHQX
tHLHX
IHSBOL
IHSBOH
VSWITCH
td(H)S
tdis(H)S
ten(H)S
tw(H)S
VCC > 4.5 V
HSB = VOL
HSB = VIL
650 µs
10 ms
1
µs
700 ns
20
ns
3
mA
5
60 µA
4.0 4.5 V
n: tRESTORE starts from the time VCC rises above VSWITCH.
o: HSB is an I/O that has a week internal pullup; it is basically an open drain output. It is meant to allow up to 32 U634H256 to be ganged
together for simultaneous storing. Do not use HSB to pullup any external circuitry other than other U634H256 HSB pins.
April 21, 2004
7
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