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U634H256D1A35G1 查看數據表(PDF) - Zentrum Mikroelektronik Dresden AG

零件编号产品描述 (功能)生产厂家
U634H256D1A35G1 PowerStore 32K x 8 nvSRAM ZMD
Zentrum Mikroelektronik Dresden AG ZMD
U634H256D1A35G1 Datasheet PDF : 14 Pages
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U634H256
DC Characteristics
Output High Voltage
Output Low Voltage
Output High Current
Output Low Current
Input Leakage Current
Output Leakage Current
High
Low
High at Three-State- Output
Low at Three-State- Output
Symbol
Conditions
VOH
VOL
IOH
IOL
IIH
IIL
IOHZ
IOLZ
VCC
IOH
IOL
VCC
VOH
VOL
VCC
VIH
VIL
VCC
VOH
VOL
= 4.5 V
=-4 mA
= 8 mA
= 4.5 V
= 2.4 V
= 0.4 V
= 5.5 V
= 5.5 V
= 0V
= 5.5 V
= 5.5 V
= 0V
Min.
2.4
8
-1
-1
Max.
Unit
V
0.4
V
-4
mA
mA
1
µA
µA
1
µA
µA
SRAM Memory Operations
No.
Switching Characteristics
Read Cycle
Symbol
Alt.
IEC
1 Read Cycle Timef
tAVAV
2 Address Access Time to Data Validg
tAVQV
3 Chip Enable Access Time to Data Valid tELQV
4 Output Enable Access Time to Data Valid tGLQV
5 E HIGH to Output in High-Zh
tEHQZ
6 G HIGH to Output in High-Zh
tGHQZ
7 E LOW to Output in Low-Z
tELQX
8 G LOW to Output in Low-Z
tGLQX
9 Output Hold Time after Address Change tAXQX
10 Chip Enable to Power Activee
tELICCH
11 Chip Disable to Power Standbyd, e
tEHICCL
tcR
ta(A)
ta(E)
ta(G)
tdis(E)
tdis(G)
ten(E)
ten(G)
tv(A)
tPU
tPD
25
35
45
Unit
Min. Max. Min. Max. Min. Max.
25
35
45
ns
25
35
45 ns
25
35
45 ns
10
15
20 ns
10
13
15 ns
10
13
15 ns
5
5
5
ns
0
0
0
ns
3
3
3
ns
0
0
0
ns
25
35
45 ns
e: Parameter guaranteed but not tested.
f: Device is continuously selected with E and G both LOW.
g: Address valid prior to or coincident with E transition LOW.
h: Measured ± 200 mV from steady state output voltage.
4
April 21, 2004
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