U630H16DC45G1 View Datasheet(PDF) - Simtek Corporation

Part Name

Description

Manufacturer

U630H16DC45G1

HardStore 2K x 8 nvSRAM

Simtek Corporation 

U630H16

DC Characteristics

Output High Voltage

Output Low Voltage

Output High Current

Output Low Current

Input Leakage Current

Output Leakage Current

High

Low

High at Three-State- Output

Low at Three-State- Output

Symbol

Conditions

VOH

VOL

IOH

IOL

IIH

IIL

IOHZ

IOLZ

VCC

IOH

IOL

VCC

VOH

VOL

VCC

VIH

VIL

VCC

VOH

VOL

= 4.5 V

=-4 mA

= 8 mA

= 4.5 V

= 2.4 V

= 0.4 V

= 5.5 V

= 5.5 V

= 0V

= 5.5 V

= 5.5 V

= 0V

Min.

2.4

8

-1

-1

Max.

Unit

V

0.4

V

-4

mA

mA

1

μA

μA

1

μA

μA

SRAM Memory Operations

No.

Switching Characteristics

Read Cycle

Symbol

Alt.

IEC

1 Read Cycle Timef

2 Address Access Time to Data Validg

3 Chip Enable Access Time to Data Valid

4 Output Enable Access Time to Data Valid

5 E HIGH to Output in High-Zh

6 G HIGH to Output in High-Zh

7 E LOW to Output in Low-Z

8 G LOW to Output in Low-Z

9 Output Hold Time after Addr. Changeg

10 Chip Enable to Power Activee

11 Chip Disable to Power Standbyd, e

tAVAV

tAVQV

tELQV

tGLQV

tEHQZ

tGHQZ

tELQX

tGLQX

tAXQX

tELICCH

tEHICCL

tcR

ta(A)

ta(E)

ta(G)

tdis(E)

tdis(G)

ten(E)

ten(G)

tv(A)

tPU

tPD

25

35

45

Unit

Min. Max. Min. Max. Min. Max.

25

35

45

ns

25

35

45 ns

25

35

45 ns

12

20

25 ns

13

17

20 ns

13

17

20 ns

5

5

5

ns

0

0

0

ns

3

3

3

ns

0

0

0

ns

25

35

45 ns

e: Parameter guaranteed but not tested.

f: Device is continuously selected with E and G both LOW.

g: Address valid prior to or coincident with E transition LOW.

h: Measured ± 200 mV from steady state output voltage.

STK Control #ML0036

4

Rev 1.0

March 31, 2006

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