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TA0102A View Datasheet(PDF) - Tripath Technology Inc.

Part Name
Description
Manufacturer
TA0102A Datasheet PDF : 12 Pages
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Tripath Technology, Inc. - Technical Information
Performance Characteristics – Single Ended, Vs = +45V
Unless otherwise specified, f = 1kHz, Measurement Bandwidth = 22kHz. TA = 25°C.
See Notes 1 & 2 for Operating Conditions and Test/Application Circuit Setup.
SYM BOL
PARAM ETER
CONDITIONS
MIN. TYP. MAX.
POUT
Output Pow er
THD+N = 0.1%
RL = 8
80
(Continuous Average/Channel)
RL = 4
130
THD+N = 1%
RL = 8
100
RL = 4
170
THD + N Total Harmonic Distortion Plus PO = 20W/Channel, RL = 8
0.05
Noise
IHF-IM IHF Intermodulation Distortion 19kHz, 20kHz, 1:1 (IHF), RL = 4
0.05
POUT = 30W/Channel
SNR
Signal-to-Noise Ratio
A-Weighted, POUT = 88W/Ch, RL = 8
98.5
CS
Channel Separation
0dBr = 30W, RL= 8
85
PSRR Pow er Supply Rejection Ratio f = 120Hz, Vripple = 100 mV
67
η
Pow er Efficiency
POUT = 230W/Channel, RL = 4
82
eNOUT
Output Noise Voltage
A-Weighted, no signal, input shorted,
300
DC offset nulled to zero
UNITS
W
W
W
W
%
%
dB
dB
dB
%
µV
Performance Characteristics – Single Ended, Vs = +33.75V
Unless otherwise specified, f = 1kHz, Measurement Bandwidth = 22kHz. TA = 25°C.
See Notes 1 & 2 for Operating Conditions and Test/Application Circuit Setup.
SYM BOL
PARAM ETER
CONDITIONS
MIN. TYP. MAX.
POUT
Output Pow er
THD+N = 0.1%
RL = 8
47
(Continuous Average/Channel)
RL = 4
77
THD+N = 1%
RL = 8
65
RL = 4
110
THD + N Total Harmonic Distortion Plus PO = 20W/Channel, RL = 8
0.05
Noise
IHF-IM IHF Intermodulation Distortion 19kHz, 20kHz, 1:1 (IHF), RL = 4
0.03
POUT = 30W/Channel
SNR
Signal-to-Noise Ratio
A-Weighted, POUT = 47W/Ch, RL = 8
100
CS
Channel Separation
0dBr = 20W, RL= 8
85
PSRR Pow er Supply Rejection Ratio f = 120Hz, Vripple = 100 mV
67
η
Pow er Efficiency
POUT = 85W/Channel, RL = 8
90
eNOUT
Output Noise Voltage
A-Weighted, no signal, input shorted,
195
DC offset nulled to zero
UNITS
W
W
W
W
%
%
dB
dB
dB
%
µV
Minimum and maximum limits are guaranteed but may not be 100% tested.
Notes:
1. V5 = +5V, VN12 = +12V referenced to VSNEG
2. Test/Application Circuit Values:
D = MUR120T3 diodes, RIN = 22.1K
RD = 33RS = 0.025RG = 30
ROCR1 = ROCR2 = 0, LF = 18uH (Amidon core T200-2)
CF = 0.22uF, CD = 0.1uF, CIN = 1uF, CBY = 0.1uF
Power Output MOSFET, M = ST STP19NB20
BBM0 =BBM1 = 1
3
TA0102A, Rev. 3.1/06.01
 

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