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Q1NC45R 查看數據表(PDF) - STMicroelectronics

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Q1NC45R N-channel 450V - 4.1Ω - 1.5A - IPAK - TO-92 SuperMESH™ Power MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
Q1NC45R Datasheet PDF : 15 Pages
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STD2NC45-1 - STQ1NC45R-AP
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
tr(Voff)
tf
tc
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Cross-over time
Test condictions
VDD = 225V, ID = 0.5A
RG = 4.7VGS = 10V
(see Figure 17)
VDD = 360V, ID = 1.5A,
RG = 4.7Ω, VGS = 10V
(see Figure 17)
Min. Typ. Max. Unit
6.7
ns
4
ns
8.5
ns
12
ns
18
ns
Table 7. Source drain diode
Symbol
Parameter
Test condictions
Min Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 1.5A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 1.5A, di/dt = 100A/µs
VDD = 100V, Tj = 150°C
(see Figure 22)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
1.5 A
6.0 A
1.6 V
225
ns
530
µC
4.7
A
5/15
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