STQ1NC45R-AP View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STQ1NC45R-AP Datasheet PDF : 15 Pages
| |||
STD2NC45-1 - STQ1NC45R-AP
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID
ID
IDM (1)
PTOT
dv/dt (2)
Drain-source voltage (VGS = 0)
Gate- source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating factor
Peak diode recovery voltage slope
Tstg
Storage temperature
Tj
Max. operating junction temperature
1. Pulse width limited by safe operating area
2. ISD < 0.5A, di/dt < 100 A/µs, VDD =80% V(BR)DSS
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Rthj-amb
Rthj-lead
Tl
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Thermal resistance junction-lead max
Maximum lead temperature for soldering
purpose
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAS
(pulse width limited by Tj Max)
Single pulse avalanche energy
EAS
(starting Tj=25°C, ID=IAS, VDD=50V)
Value
IPAK
450
±30
1.5
0.95
6
30
0.24
3
TO-92
0.5
0.315
2
3.1
0.025
–65 to 150
Unit
V
V
A
A
A
W
W/°C
V/ns
°C
°C
Value
IPAK
4.1
100
--
TO-92
--
120
40
275
260
Unit
°C/W
°C/W
°C/W
°C
Value
Unit
1.5
A
25
mJ
3/15
|
|
Share Link: 