STQ2NF06L View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STQ2NF06L Datasheet PDF : 9 Pages
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STQ2NF06L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(on)
tr
Turn-on Time
Rise Time
VDD = 30 V
ID = 1 A
10
ns
RG = 4.7 Ω
VGS = 4.5 V
20
ns
(Resistive Load, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD= 48 V ID= 2 A VGS= 5 V
5.6
7.6
nC
1.2
nC
2.6
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 30 V
ID = 1 A
RG = 4.7Ω,
VGS = 4.5 V
(Resistive Load, Figure 3)
Min.
Typ.
17
6
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 2 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 2 A di/dt = 100A/µs
VDD = 20 V Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
28
31
2.2
Max.
2
8
1.3
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance Junction-lead
3/9
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