STD18N55M5 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STD18N55M5

N-channel 550 V, 0.18 Ω, 13 A, MDmesh™ V Power MOSFET in D²PAK, DPAK, TO-220FP and TO-220

STMicroelectronics 

Electrical characteristics

STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5

Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs

vs temperature

temperature

VGS(th)

(norm)

1.10

1.00

ID=250µA

AM08670v1

RDS(on)

(norm)

2.1

1.9

1.7

ID=6.5A

VGS=10V

AM08671v1

1.5

0.90

1.3

1.1

0.80

0.9

0.70

-50 -25 0 25 50 75 100 TJ(°C)

0.7

0.5

-50 -25 0 25 50 75 100 TJ(°C)

Figure 16. Switching losses vs gate resistance Figure 17. Normalized BVDSS vs temperature

(1)

E

(μJ)

ID=9A

140 VCL=400V

VGS=10V

120

100

80

Eon

AM08673v1

Eoff

60

40

20

0

0

10

20

30

40

1. Eon including reverse recovery of a SiC diode

RG(Ω)

BVDSS

(norm)

1.07

1.05

ID=1mA

AM08672v1

1.03

1.01

0.99

0.97

0.95

0.93

-50 -25 0

25 50 75 100 TJ(°C)

8/22

Doc ID 17078 Rev 2

Share Link: