STD18N55M5 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STD18N55M5

N-channel 550 V, 0.18 Ω, 13 A, MDmesh™ V Power MOSFET in D²PAK, DPAK, TO-220FP and TO-220

STMicroelectronics 

STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

TO-220, DPAK,

D²PAK

TO-220FP

VGS

ID

ID

IDM (2)

PTOT

IAR

EAS

dv/dt (3)

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

Single pulse avalanche energy

(starting Tj = 25°C, ID = IAR, VDD = 50 V)

Peak diode recovery voltage slope

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

Tstg Storage temperature

Tj Max. operating junction temperature

1. Limited only by maximum temperature allowed.

2. Pulse width limited by safe operating area.

3. ISD ≤13 A, di/dt ≤400 A/µs, VPeak < V(BR)DSS, VDD = 400 V.

25

13

8.3

52

90

4

13 (1)

8.3 (1)

52 (1)

25

200

15

2500

- 55 to 50

150

Unit

V

A

A

A

W

A

mJ

V/ns

V

°C

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

DPAK D²PAK TO-220 TO-220FP

Rthj-case Thermal resistance junction-case max

Rthj-amb Thermal resistance junction-ambient max

Rthj-pcb Thermal resistance junction-pcb max

50

Tl

Maximum lead temperature for soldering

purpose

1.39

30

5

62.5

300

°C/W

°C/W

°C/W

°C

Doc ID 17078 Rev 2

3/22

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