STP3NA100FP View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
| STP3NA100FP Datasheet PDF : 0 Pages | |||
STP3NA100/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
S ymb ol
td(on)
tr
Qg
Qgs
Qgd
P a ra m et er
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 500 V
RG = 4.7 Ω
VDD = 800 V
ID = 1.7 A
VGS = 10 V
ID = 3.5 A VGS = 10 V
Min.
Typ .
20
27
48
8
23
Max.
27
35
65
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
S ymb ol
tr(Vo f f)
tf
tc
P a ra m et er
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 800 V ID = 3.5 A
RG = 47 Ω VGS = 10 V
(see test circuit, figure 5)
Min.
Typ .
62
22
95
Max.
85
30
125
Unit
ns
ns
ns
SOURCE DRAIN DIODE
S ymb ol
P a ra m et er
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 3.5 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
ISD = 3.5 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
(see circuit, figure 5)
Charge
IRRM Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ .
Max.
3.5
14
Unit
A
A
1.6
V
1000
ns
15
µC
35
A
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9
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