STD17NF03 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STD17NF03

N-channel 30V - 0.038Ω - 17A - DPAK/IPAK STripFET™ II Power MOSFET

STMicroelectronics 

STD17NF03L - STD17NF03L-1

Electrical characteristics

Table 5. Source drain diode

Symbol

Parameter

Test conditions

Min.

ISD

ISDM (1)

Source-drain current

Source-drain current

(pulsed)

VSD (2) Forward on voltage

ISD = 17A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time ISD = 17A, di/dt = 100A/µs,

Reverse recovery charge VDD = 15V, Tj = 150°C

Reverse recovery current (see Figure 15)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Typ.

28

18

1.3

Max. Unit

22

A

88

A

1.5 V

ns

nC

A

5/14

Share Link: