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ST330C View Datasheet(PDF) - International Rectifier

Part NameDescriptionManufacturer
ST330C PHASE CONTROL THYRISTORS Hockey Puk Version IR
International Rectifier IR
ST330C Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
ST330C..C Series
Bulletin I25155 rev. D 04/03
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number Code
04
VDRM/VRRM, max. repetitive
peak and off-state voltage
V
400
08
800
ST330C..C
12
1200
14
1400
16
1600
VRSM , maximum non-
repetitive peak voltage
V
500
900
1300
1500
1700
IDRM/IRRM max.
@ TJ = TJ max
mA
50
On-state Conduction
Parameter
IT(AV) Max. average on-state current
@ Heatsink temperature
IT(RMS) Max. RMS on-state current
ITSM Max. peak, one-cycle
non-repetitive surge current
I2t
Maximum I2t for fusing
I2t Maximum I2t for fusing
VT(TO)1 Low level value of threshold
voltage
VT(TO)2 High level value of threshold
voltage
rt1
Low level value of on-state
slope resistance
rt2
High level value of on-state
slope resistance
VTM Max. on-state voltage
IH
Maximum holding current
IL
Typical latching current
Switching
Parameter
di/dt Max. non-repetitive rate of rise
of turned-on current
td
Typical delay time
tq
Typical turn-off time
2
ST330C..C
720 (350)
55 (75)
1420
9000
9420
7570
7920
405
370
287
262
4050
Units Conditions
A 180° conduction, half sine wave
°C double side (single side) cooled
DC @ 25°C heatsink temperature double side cooled
t = 10ms No voltage
A t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
KA2s
KA2s
t = 10ms No voltage
t = 8.3ms reapplied
Initial TJ = TJ max.
t = 10ms
t = 8.3ms
100% VRRM
reapplied
t = 0.1 to 10ms, no voltage reapplied
0.91
0.92
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
(I > π x IT(AV)),TJ = TJ max.
0.58
0.57
1.96
600
1000
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
m
(I > π x IT(AV)),TJ = TJ max.
V
Ipk= 1810A, TJ = TJ max, tp = 10ms sine pulse
mA TJ = 25°C, anode supply 12V resistive load
ST330C..C
1000
1.0
100
Units Conditions
A/µs
µs
Gate drive 20V, 20, tr 1µs
TJ = TJ max, anode voltage 80% VDRM
Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs
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