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SPI20N60C3 View Datasheet(PDF) - Infineon Technologies

Part Name
Description
Manufacturer
SPI20N60C3
Infineon
Infineon Technologies Infineon
SPI20N60C3 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Final data
SPP20N60C3, SPB20N60C3
SPI20N60C3, SPA20N60C3
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Worldwide best RDS(on) in TO 220
Ultra low gate charge
P-TO220-3-31
P-TO262-3-1
VDS @ Tjmax 650
V
RDS(on)
0.19
ID
20.7 A
P-TO263-3-2 P-TO220-3-1
Periodic avalanche rated
Extreme dv/dt rated
3
12
High peak current capability
P-TO220-3-31
Improved transconductance
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP20N60C3
SPB20N60C3
SPI20N60C3
SPA20N60C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4398
P-TO263-3-2 Q67040-S4397
P-TO262-3-1 Q67040-S4550
P-TO220-3-31 Q67040-S4410
Marking
20N60C3
20N60C3
20N60C3
20N60C3
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=10A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=20A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Symbol
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
SPSP_PB__BI SPA
20.7
13.1
20.71)
13.11)
62.1
62.1
690
690
1
1
20
20
±20
±20
±30
±30
208
34.5
-55...+150
Unit
A
A
mJ
A
V
W
°C
Page 1
2003-10-08
 

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